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| 25 -10V 20 -4.5V -3V 10 Vds=-5V 8 -Id (A) -2.5V 10 -Id (A) 15 6 125C 4 5 Vgs=-2V 2 25C 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 120 0 0 0.5 1 1.5 2 2.5 3 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 100 Vgs=-2.5V Normalized On-Resistance 1.4 Id=-5A Vgs=-4.5V Vgs=-10V Rds(on) (m:) 80 1.2 Vgs=-2.5V Id=-2A 60 40 Vgs=-4.5V 1 Vgs=-10V 20 0 2 4 6 8 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 190 170 150 Id=-2A 1.0E+01 1.0E+00 1.0E-01 125C Rds(on) (m:) 130 -Is (A) 125C 110 90 70 50 30 25C 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 1.0E-06 10 HIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 OMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARIS -Vsd (Volts) -Vgs (Volts) UT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Figure 6: Body-Diode Characteristics UNCTIONS Figure 5: On-Resistance vs. Gate-Source Voltage AND RELIABILITY WITHOUT NOTICE. 5 Vds=-15V Id=-4A 4 1400 1200 Capacitance (pF) 1000 800 600 400 Coss 200 Crss Ciss -Vgs (Volts) 3 2 1 0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150C Ta=25C Rds(on) limited 100Ps 1ms 0.1s 10ms 10Ps 40 Tj(max)=150C Ta=25C 30 -Id (Amps) Power (W) 10.0 20 1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk =Ta+Pdm.ZTja .RTja RTja =90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton T Single Pulse 0.01 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 0.00001 0.0001 0.001 0.01 1 100 1000 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT0.1 AUTHORIZED. AOS DOES 10 NOT ASSUME ANY LIABILITY ARIS OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. PulseRESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, AOS Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 10 125C 250 f = 1MHz 1 200 Capacitance (pF) 25C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 If (Amps) 150 0.1 100 0.01 50 0.001 0 0 5 10 15 20 25 30 Vka (Volts) Figure 13: Schottky Capacitance Characteristics Vf (Volts) Figure 12: Schottky Forward Characteristics 0.7 0.6 0.5 100 If=3A 10 1 Vr=30V 0.1 0.01 0.001 0 25 50 75 100 125 Temperature (C) 150 175 0 25 50 75 100 125 150 175 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature 0.4 If=1A 0.3 0.2 0.1 Figure 14: Schottky Forward Drop vs. Junction Temperature 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk =Ta+Pdm.ZTja .RTja RTja =90C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Leakage Current (mA) Vf (Volts) 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance |
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